Abstract
Zirconium diboride exhibits high thermal conductivities and high melting point, which are beneficial for use in extreme environments. Examples including cutting tools, high-temperature electrodes and leading edges of hypersonic space vehicles. However, there is limited literature on the infrared properties of ZrB2 thin films. In this study, we report the results of infrared emissivity of sputter-deposited films and post-annealed films. X-ray diffraction shows promoted crystalline quality and grains growth for ZrB2 films with the increasing annealing temperature and time. The thin film exhibits high thermal stability and a low infrared emissivity of 0.01 (8 ~ 14 μm) after annealed at 1000℃ for 10 h. Besides, with an increase in annealing temperature and annealing time, film densification and grains growth were observed, leading to decrease of electrical resistivity and infrared emissivity.
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