Abstract
We report on the detailed study of the structural properties of the large-area GaN slabs grown by HVPE method over ceramic support with the use of X-ray analysis with powder diffraction technique. The impact of V/III ratio on the specifics of the crystal structure of the material was studied. It was shown, that depending of growth condition either texture along (00.2) axis, i.e., along c axis in polar GaN, or along (11.0) axis, i.e., normal to so-called m-plane GaN are formed.
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