Abstract
The mechanism of occurrence of sensitivity of microbolometer detector arrays based on vanadium oxide to terahertz radiation are analyzed. Experimental data are given showing the possibility of increasing the sensitivity of microbolometer detectors in the terahertz range by using an additional thin metal absorbing layer applied on the microbolometer membrane. A polarization dependence of the sensitivity of microbolometers in the terahertz and far infrared spectral ranges is found. It is shown that the sensitivity of microbolometers in the terahertz range is due to the absorption of radiation in the narrow metal runs placed on the support legs of the microbolometers and playing the role of an ohmic contact between the heat-sensitive layer and the processing curcuit.
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