Abstract
The application of femtosecond laser irradiation for the investigation of Geiger discharge process in silicon photomultiplier (SiPM) is discussed. It is shown experimentally that sub-picosecond pulses of laser beam focused to micron spot sizes allow studying the dynamics of Geiger discharge process in single cell of silicon photomultiplier. These studies are aimed at identifying the factors limiting the timing resolution of this class of devices.
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