Abstract
The Schottky-barrier diodes are commonly classified as low-noise high-speed semiconductor devices for high frequency and microwave applications. When reverse-biased at the breakdown voltages they can be employed as noise sources characterized by an effective noise temperature from 10 K to 10 K [1]. In the present paper we describe high-power noise generator with a Schottky diode. Actually it is a dynamical noise (chaos) generator similar to the tunnel diode oscillator driven by external sinusoidal voltage [2, 3]. The main shortcoming of the externally driven (non-autonomous) systems is that sharp peaks do appear in the power spectra at the drive frequency and its higher harmonics. In contrast, the dynamical noise generator suggested in this paper is an autonomous one, providing essentially smoother power spectra. Two experimental prototypes of the oscillator operating at different fundamental frequencies f∗ = 1/2π √ LC have been investigated. The first one has been set at low megahertz frequency (f∗ ≈ 1 MHz), meanwhile the second one has been tuned to operate at high megahertz frequency (f∗ ≈ 100 MHz).
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