Abstract
We introduce a transparent diode that consists of a coupled junction of amorphous indium tin zinc oxide and Al2O3. In addition, the photo-sensing behavior under visible light was investigated. In the initial dark state, the diode exhibited maximum on current density of 10 A/cm2 and off current density of 10−9 A/cm2–10−10 A/cm2. Because of the extremely low off current level, it exhibited an excellent on/off ratio of 1010–1011. The light sensibility of the diode started from as low as 250 lux, and the off current density increased about three orders of magnitude under the exposure of 3000 lux. Such an off current density increase turned out to be mainly due to the short wavelength (400 nm) visible light, which has enough energy to generate photo-electrons from the valence band or deep level trap site to the conduction band. Meanwhile, a square pulse type dynamic light sensing test resulted in residual current at the dark state. The residual current was electrically removed by applying a forward bias, and the identical light sensing reproducibility was confirmed by repetitive trials.
Highlights
As generation display technology advances, research on various sensors is receiving more attention because they can be integrated with circuits in the display electronics and enable the interaction between humans and the devices
The results of plotting the electrical characteristics of the dark state in the logarithmic mode showed that the on current density was around 10 A/cm2, while the off current density was around 10−9 A/cm2–10−10 A/cm2, which was in the range of the detection limit
A photo-current was generated under visible light irradiation, as shown in the J–V characteristics of the bright state represented by the red curve in Fig. 2, and this indicated an increase in the off state current density by three orders of magnitude
Summary
As generation display technology advances, research on various sensors is receiving more attention because they can be integrated with circuits in the display electronics and enable the interaction between humans and the devices. It should react with the light and increase current density under illumination, distinguishing the difference between the dark state and the bright state. One type of photo-sensing switch for the display system is an amorphous oxide semiconductor based transparent thin film photo-transistor.. One type of photo-sensing switch for the display system is an amorphous oxide semiconductor based transparent thin film photo-transistor.1 Such an oxide based switch is advantageous for its low off current density and low temperature fabrication capability for interconnection with other devices.. We expect that transparent oxide semiconductor based diodes will have an important role as the switch in the generation display applications
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