Abstract
A study is made on the chemical bonding state analysis of B and P injected into a Si wafer by means of the total reflection XPS (TRXPS) method. Inelastic scattering electrons forming a strong background of photoelectron spectrum can remarkably be reduced in TRXPS. The measurement of a small amount of B and P (<10 12 atom cm −2) on the Si wafer by TRXPS shows that SiB 4 is formed on the Si wafer. Organic phosphorus compounds originated from the contamination in a clean room and P 2O 5 are additionally found. It is demonstrated that the TRXPS is a very effective analysis method for semiconductor surface analysis.
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