Application of the infinite velocity method for quantifying negative secondary ion emissions to multi‐layered samples

Abstract

AbstractThis report illustrates, in a stepwise fashion, the application of a new method for quantifying SIMS results (termed the infinite velocity method) to the depth profile analysis of multilayered samples. The two samples analysed comprised a silicon substrate implanted with cobalt and a silicon substrate bearing an oxide layer implanted with boron. Concentrations were extracted by: sampling the secondary ion emissions over several kinetic energies during the depth profile; correcting the resulting intensities for instrument transmission and sputter yield effects, so that these may be poltted against the inverse of the velocity; and referencing the point at which the resulting curves intersect with the intensity axis (intensity at infinite velocity) to an element whose concentration is known, or to the sum of all major element intercept data. Characteristic velocity data obtained from each cycle of the depth profiles were also used to illustrate a new method for defining the position of the interface. To illustrate the validity of these results, peak concentrations were compared with those calculated via the integration method as well as Auger depth profile analysis.