Abstract
The application of generalized logistic (GL) functions of the second type in fitting an important smoothing factor in a charge-based MOSFET model has been proposed. Beside the accurate results for the inversion charge density (ICD), this the GL-functional form of the smoothing factor enables also continuous and varied transitions of the ICD between weak and strong inversion region. Simulated values of the drain current, capacitance and transconductance match closely with numerical data for a wide range of substrate doping and oxide thickness.
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