Application of the Atomic Layer Etching technique to remove broken layers after plasma-etched GaAs surface treatment

Abstract

The work considers the application of focused ion beam techniques for the formation of nanoscale structures, as well as the atomic layer etching method for removing layers with surface defects. Also in the work, modeling of the formation of structures by the FIB method on the GaAs surface was used to determine the depth of penetration of atoms into the structure under certain experimental conditions. This method of forming defect-free structures was developed for the formation of a nanoscale surface relief for the subsequent growth of quantum dots by the method of drop molecular beam epitaxial.