Abstract
The applicability of MIL-STD-883D Method 1019.4 to predicting the low-dose-rate radiation response of nonhardened power MOSFETs has been investigated. Method 1019.4 works well in providing bounds for the threshold-voltage shift. However, it is not intended to provide an estimate of the actual /spl Delta/V/sub T/ due to low-dose-rate irradiation. A modified method is proposed which can yield more information on the threshold-voltage shift at low dose rates for power MOSFETs. >
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