Abstract
This paper presents the use of Taguchi method in the optimization process of a Self-switching Diode (SSD) as a Terahertz rectifier to obtain the optimal parameters for rectification. The rectification performance is mainly contributed by a parameter known as curvature coefficient, γ which is derived from the current-voltage (I-V) behavior of the device and can be altered by varying the device’s geometrical structure. The parameters involved are the channel length, channel width and trenches width of the device, and the rectification performance are observed based on the peak of γ and its corresponding bias voltage. Using Taguchi method for design of experiment (DOE), effects on the interaction among these parameters are investigated by employing the orthogonal array and evaluation of the signal-to-noise (S/N) ratio both in the peak of γ and its corresponding bias voltage. The proposed parameters using this method showed γ peak of 32 V−1 and 30 V−1 at DC bias of 30 mV and zero-bias, respectively.
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