Application of surface techniques to study oxide growth processes

Abstract

Surface-analytical techniques are useful to characterize oxide films and to study oxide growth processes on metals and semiconductors. This paper will summarize work at NRC on the high-temperature oxidation of both FeCrAl alloys and silicon, as well as the thermal and UV ozone oxidation of III–V semiconductors. In these studies, surface-analytical data complemented by information provided by other techniques, e.g., TEM, lead to a better understanding of oxidation phenomena and oxide growth mechanisms for a wide variety of materials and applications.