Abstract
The flux and the incident kinetic energy are the most important deposition variables in thin film growth processes. By changing these variables, one can, in principle, alter the reaction pathways and the rate at which they occur and produce a different material than under thermody-namic equilibrium conditions. The significance of supersonic molecular jets stems from the fact that both, the flux and the incident kinetic energy of neutral growth species, can be varied independently. The number of studies that are exploring these advantages in a wide range of materials systems is growing rapidly. In this article the application of supersonic molecular jets in semiconductor thin film growth is reviewed. The effects of both the superthermal incident kinetic energy and the flux on the growth and properties of elemental and compound semiconductors are examined.
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