Abstract
Use of a superhigh (102–103 °C/s) rate of cooling of a solution-melt substantially extends the possibilities of the method of liquid-phase epitaxy. In the case of the system Al-Ga-As we demonstrate the influence of superfast cooling on the main parameters of the as-grown layers, such as their thickness, composition, and carrier concentration. Possibilities of the method for obtaining various semiconductor heterostructures with high (up to 12%) lattice mismatch of the contacting materials are considered.
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