Abstract
Dynamical X‐ray diffraction theory is extensively used to evaluate the structure of single crystal materials, where information on composition and strain can be extracted from high resolution rocking curves. Many critical materials and structures (lattice‐mismatched semiconductor heterostructures, or materials modified by ion implantation processing) may contain process‐induced structural defects and cannot be modeled by conventional perfect crystal dynamical theory approaches. Statistical dynamical diffraction theory (SDDT) incorporates both incoherent (kinematical and diffuse) and coherent (dynamical) scattering. Treatments of the SDDT theory are typically mathematically intensive while lacking instructions on how to actually implement the theory in practice. This paper discusses the implementation of the SDDT and modifications that allow for successful SDDT analyses of fully relaxed SiGe on Si.
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