Application of Sr2Nb2O7 Family Ferroelectric Films for Ferroelectric Memory Field Effect Transistor

Abstract

The compounds of the Sr2Nb2O7 (SNO) family are suitable for use as ferroelectric materials for ferroelectric memory field effect transistors (FETs), because these substances have a low dielectric constant, low coercive field and high heat-resistance. In this study, we succeeded in preparing Sr2(Ta,Nb)2O7 (STN) capacitors on polycrystalline silicon (poly-Si). From SIMS profiles, no interdiffusion in the STN metal ferroelectric metal insulator semiconductor (MFMIS) structure was confirmed. C–V and ID–VG hysteresis curves which were dependent on ferroelectric polarization were obtained. These capacitors were applied to floating gate type ferroelectric random access memory (FFRAM) cells. The degradation in ferroelectricity of STN capacitors was not observed during FFRAM cell fabrication process. We succeeded in operating FFRAM cells with a lower voltage than that required for PZT and confirmed the drain current difference of 1 or 2 orders at the 30 s after applying write pulses of ±5 V or ±10 V.