Abstract

Optical absorption and thermal conduction are the two key factors affecting temperature distribution and, subsequently, the write, erase characteristics of a phase-change optical recording disk. Therefore, by using carefully measured film physical properties of each layer, this work simulates a transient temperature profile while simultaneously considering optical absorption and thermal conduction. Through the simulated transient temperature profile, cooling-rate and reflectivity, dependence of phase-changed spot size on the laser power and laser pulse duration was observed. The proper combination of the disk structure and the associated write, erase conditions are obtained as well. A disk structure can subsequently be designed on the basis of this information. In addition, a novel dielectric layer, i.e. hydrogenated amorphous carbon (/spl alpha/-C:II), is simulated and compared with the disk applying conventionally used ZnS-SiO/sub 2/ dielectric layers. The disk structures used herein are PC/ZnS-SiO/sub 2//GeSbTe/ZnS-SiO/sub 2//Al and PC//spl alpha/-C:H/GeSbTe//spl alpha/-C:H/Al. According to those results, /spl alpha/-C:H film is highly promising as a dielectric layer of the phase change optical recording disk for both wavelengths of 780 and 660 nm.

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