Abstract

Secondary Ion Mass Spectrometry (SIMS) analysis of nitrogen content in Tantalum Nitride (TaN) film is used for a new set-up process monitoring. Technical Challenges facing by the application of SIMS analysis are include a) Selection of appropriate representative elemental molecular; b) Analysis polarity and primary beam sputtering energy; c) Repeatability and quantification. SIMS is one of the most capable tools to detect low nitrogen content in the film compared with XPS or Auger, so as to be chosen to ensure an excellent controllability of deposition process for thin films. In this paper, the methodology of characterization of low nitrogen concentration in the thin film by SIMS will be investigated and demonstrated.

Full Text

Published Version

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.