Application of silicon field emitter arrays for space-charge compensation of low energy ion beam

Abstract

According to the semiconductor road-map[1], lowering implantation energy of boron less than 200 eV will be demanded for a high-dose purpose so that precise implantation will become difficult due to increase of space-charge effect. We have proposed that silicon field emitter array surface-treated by carbon (Si:C-FEA) will be a possible candidate for the space charge compensation(SCC) device, because the array is free from metal contamination and has less outgassing[2]. We have done various investigations on the Si:C-FEA for the SCC with respect to improvement of toughness against gaseous ambient[3], relationship between lifetime and carbon concentration[4], development a SCC evaluation system[5], and preliminary SCC experiment using the Si:C-FEA[1]. In this study, we evaluated transport property of low energy ion beam (500eV Ne+) under space-charge compensated situation by means of supplying low energy electrons from the Si:C-FEA with decelerative electrodes.