Abstract
High purity SiC crystal was used as a passive monitor to measure neutron irradiation temperature in the 49-2 research reactor. The SiC monitors were irradiated with fast neutrons at elevated temperatures to 3.2 × 1020 n/cm2. The isochronal and isothermal annealing behaviors of the irradiated SiC were investigated by x-ray diffraction and four-point probe techniques. Invisible point defects and defect clusters are found to be the dominating defect types in the neutron-irradiated SiC. The amount of defect recovery in SiC reaches a maximum value after isothermal annealing for 30 min. Based on the annealing temperature dependences of both lattice swelling and material resistivity, the irradiation temperature of the SiC monitors is determined to be ∼410 °C, which is much higher than the thermocouple temperature of 275 °C recorded during neutron irradiation. The possible reasons for the difference are carefully discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
