Abstract
In this paper, we demonstrate the various applications of the ETEM Si plasmon imaging technique in semiconductor failure analysis. The mechanism of the plasmon imaging will be discussed briefly, then followed by four case studies. The capability of Si plasmon imaging to distinguish the silicon oxide (e.g. gate oxide) and the silicon materials (e.g. poly gate and substrate) is its key advantage over the conventional imaging techniques. Si plasmon imaging not only can identify the defective residues but also can be performed at high magnification to investigate the gate oxide and its interfaces with poly or substrate.
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