Abstract
Materials analysis problems often demand site-specific preparation at sub µm scale and element analysis at nm scale. Focused ion beam instruments and field emission transmission electron microscopes are instruments offering appropriate methods. This contribution features different applications: We show how EDX/EELS investigations help to understand the mechanism and the different stages of worm corrosion encountered during the manufacturing of aluminum interconnects. We present calibration data suitable for the quantitative determination of Ge in SiGe material by EFTEM/ESI at sub 10 nm scale. We describe a 3D defect analysis technique for silicon devices which combines defect localization in thick plan-view samples by 400 kV TEM with subsequent FIB cross-sectioning of the plan-view specimen. We demonstrate the application of FIB tomography to the characterization of delaminations at a chip / molding compound interface.
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