Abstract
Reversed silicon wafer direct bonding (RSDB) has been applied to Silicon-on-insulator (SOI) power Integrated Circuits (ICs). The RSDB power metal-oxide-semiconductor field-effect transistor (MOSFET) is superior to the power MOSFET using a conventional SOI substrate. In a RSDB power MOSFET, the threshold voltage is independent of the substrate bias because its gate electrode shields the substrate bias from the channel. Moreover, the parasitic bipolar effect is suppressed. RSDB also has a higher production yield. Two-dimensional device simulation results show how to optimize the device parameters enabling us to maximize the breakdown voltage of the RSDB power MOSFET. The electrical characteristics of nMOSFETs fabricated using RSDB are the same as those of nMOSFETs fabricated using the conventional SOI substrate.
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