Application of response surface methodology to investigate nano-finishing of the silicon wafer

Abstract

The aim of this research is study the effect of polishing factors to the reduction ratio rate in surface roughness (%[Formula: see text] during the Magnetic Abrasive Finishing (MAF) process using Response Surface Methodology (RSM). The parameters studied were machining gap, rotational speed, abrasive size and magnetic abrasive particle (MAP) size. Quadratic models were developed by applying Box–Behnken Design (BBD). Also, experiments were carried out on the silicon wafer and results of surface roughness data were analyzed by using analysis of variance (ANOVA) and significant factors were identified. According to our findings, the maximum %[Formula: see text] value and the best surface roughness of silicon wafer achieved 3.70 and 51 nm, respectively.