Abstract
This paper reports on the application of Rutherford Backscattering Spectrometry (RBS) and Elastic Recoil Detection Analysis (ERDA) using the microbeam system at Tohoku University. The first microbeam RBS/ERDA spectra in this beam line were successfully obtained for microstructured semiconductor devices. The results indicate a clear difference in stoichiometry and thickness after annealing. In addition, a comparison with Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) analysis is presented.
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