Application of radiation curing in the preparation of polycarbosilane-derived SiC fibers

Abstract

Polycarbosilane fibers were irradiated by gamma-rays under vacuum and by electron beam in He gas flow or under vacuum at room temperature. Free radicals on Si and C atoms were produced. Most radicals reacted with each other, causing cross-links between polycarbosilane molecules. Some radicals, which did not contribute to cross-linking, were fairly stable under vacuum or in inert gas at room temperature but oxidized on exposure to air. The number of stable radicals under vacuum could be decreased by annealing. The remaining radical concentration was about 1% after annealing at 513 K. By a combination of radiation curing and annealing, SiC fibers with smaller quantities of oxygen were prepared. The mechanical properties of the SiC fibers showed a high tensile strength of 2.5 GPa after heat treatment at 1773 K. On the other hand, polycarbosilane fibers could be cured by radiation oxidation at room temperature, that is, gamma-ray or electron irradiation in oxygen, and the oxygen content could be well controlled by irradiation dose and dose rate. The SiC fibers obtained by the radiation oxidation had an oxygen gradient from the surface to the center which was dependent on the radiation oxidation conditions.