Abstract
Transparent zinc oxide (ZnO) thin films were deposited on various substrates using a pulsed laser deposition (PLD) technique. During the PLD, oxygen pressure and substrate temperature were varied in order to find an optimal preparation condition of ZnO for thin film transistor (TFT) application. Dependence of optical, electrical and crystalline properties on the deposition conditions was investigated. The ZnO thin films were then deposited on SiN/c-Si layer structures in order to fabricate a TFT device. The pulsed laser deposited ZnO films showed a remarkable TFT performance: field effect mobility ( μ FE) of 2.4–12.85 cm 2/V s and ratio of on and off current ( R on/off) in 2–6 order range. Influence of ZnO preparation conditions on the resulting TFT performance was discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
