Abstract
Proximity effect correction for electron beam (EB) direct writing is studied in this paper. An iterative calculation of exposure-dose modulation by equalizing the deposited energy of all figures requires an extremely long calculation time, especially in the case of high EB acceleration voltage. Therefore it is not practical for the correction of LSI. The correction method using pattern-area density, however, could realize the high-speed proximity effect correction. In this paper, this method is first investigated from the standpoint of the correction accuracy. Next, the applicability of this method to two critical cases is examined. One is the patterning on a heavy-metal substrate, on which backscattering yield of electrons is high. The other is the application to the cell-projection exposure, in which it is impossible to modulate exposure dose inside the cell. Lastly, the calculation time of the proximity effect correction is evaluated for 64 Mbit dynamic random access memories (MbDRAMs).
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