Abstract
In this paper, two methods of extracting continuous positron lifetime distribution are utilized, one is the numerical Laplace inversion, another is the maximum entropy method. The result of continuous lifetime distribution is used to discriminate the native vacancy-type defects in GaAs and InP with different conduction type. It is demonstrated that the lifetime distribution can give us more detailed information on the native defects. In particular, the direct evidence of positron trapping by vacancies is observed both in semi-insulating GaAs and in p-type InP, of which the identification of defects is still a question in debate.
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