Abstract
The influence of γ-irradiation on the positron annihilation lifetime spectra in chalcogenide vitreous semiconductors of As-Ge-S system has been analysed. The correlations between lifetime data, structural features and chemical compositions of glasses have been discussed. The observed lifetime components are connected with bulk positron annihilation and positron annihilation on various native and γ-induced open volume defects. It is concluded that after γ-irradiation of investigated materials the γ-induced microvoids based on S1–, As2–, and Ge3– coordination defects play the major role in positron annihilation processes.
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