Abstract
Plasma polymerized methylsilane resist films (PPMS) have high sensitivity to short wavelength radiation. The photoinduced oxidation of PPMS films exposed in air forms siloxane network material (called PPMSO), allowing dry development by selective etching of the unexposed regions upon treatment with chlorine based plasmas. Negative-tone patterns of oxidized methylsilane thus formed can be consolidated in a standard resist stripper to form SiO 2 like hard mask patterns. In this work, PPMS films are deposited using a commercial single wafer cluster tool dedicated to dielectric deposition. After exposure at 248 or 193 nm, PPMS development is performed in a commercial high density plasma source etcher. Oxide patterns obtained from PPMS films are used for organic resist patterning (bi-layer application) and gate stack patterning (single layer application).
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