Abstract
R.f. plasma oxidation of silicon in the reactive ion etching (RIE) mode is investigated as a pretreatment for silicon direct bonding (SDB). An ‘active oxide’ is formed on the surface, which can be wetted by water rinsing. The result is good adhesion of the wafer pairs to be bonded. A bond strength of 1.3–2.7 J/m 2 , sufficient for assembling purposes, is already obtained at temperatures of 450 °C.
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