Abstract
On-wafer RF calibration methods are compared to the conventional Impedance Standard Substrate (ISS) calibration combined with a dummies de-embedding approach for transistors of an advanced BiCMOS process. We discuss the design of customized calibration standards addressing specifics of the silicon BiCMOS process. Our results show that on-wafer calibration methods are the most suitable approaches for accurate characterization of sub-THz SiGe HBT's.
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