Abstract
Metal–semiconductor–metal (MSM) InP detectors were fabricated from base materials obtained from various manufacturers. The detectors are of interest for measurement of short X-ray pulses from laser plasma and other X-ray pulsed sources. It is because they can be made to operate up to the picosecond range and can be used for measurement of considerably hard (up to 100 keV) X-rays because of high average Z of the InP material. InP detectors can complement silicon ones, which usually operate in the 1–10 keV energy range and nanosecond time range. The detectors made were tested with the use of pulsed sources of light and X-ray radiation operating in the picosecond and nanosecond ranges. The InP detectors are compared with some other fast high-Z detectors made of GaAs, which have been investigated earlier. The design rules of a fast MSM detector and a detection head based on it are discussed. The detectors are of small dimension that is untypical for the case of dealing with high doses of radiation. Temporal resolution of these detectors is about 100 ps.
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