Abstract
A new lift-off process using an inorganic MoO3 electron resist is proposed and applied to the fabrication of openings in sputter-deposited SiO2 and SiO films. A MoO3 mask pattern with overhang structure is fabricated by the two-step sputter-deposition of MoO3 and a subsequent electron-lithographic technique. The MoO3 mask pattern has a heat-resistive property and can be successfully used to lift off the sputter-deposited SiO2 and SiO films.
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