Abstract
Free carrier concentration profiles were determined by Fourier Transform Infrared (FTIR) variable angle spectroscopic ellipsometry. The technique exploits carrier absorption in the mid-infrared spectral range and combines the sensitivity of ellipsometry with a simple Drude free carrier absorption model to determine the carrier profile. In this study, the carrier profiles were modeled as graded multilayers that were constrained to a specific functional form (e.g. Gaussian, complementary error function) when appropriate. Carrier profiles from boron and arsenic ion-implanted that had been subjected to furnace or Rapid Thermal Annealing (RTA) annealed silicon wafers were compared to Spreading Resistance Probe and Secondary Ion Mass Spectrometry profiles. p−p+doped epitaxial silicon samples (before and after annealing) were also measured and the results were compared to theory.
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