Abstract
An experimental approach was proposed for the measurement of the surface potential (SP) induced on an insulator surface during ion irradiation by ion scattering spectroscopy (ISS). The resultant ISS spectra obtained for a MgO thin film of 600nm thickness on a Si substrate under 950eV He+ irradiation revealed that the surface is positively charged by approximately 230V. In addition, the onset energy of a secondary ion peak indicated a SP of approximately 205V. The present results confirmed that ISS is an effective technique for measuring the SP during ion irradiation.
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