Abstract
This paper investigates the possibility of applying an integrated gate commutated thyristor (IGCT) into high-current high-power rectifier systems. The optimal power converter topology that fully utilizes the functionality of the IGCT is proposed. The proposed power converter consists of a front-end diode rectifier and three-level step-down dc/dc converter. As compared to two-level operation, half the input dc voltage and twice the effective switching frequency of three-level operation can provide a wider operation range of continuous conduction mode resulting in a higher average output current of less ripple size than two-level case. A laboratory prototype of a 5-kA 3.1-MW rectifier has been simulated and tested to confirm the feasibility of the IGCT in the proposed power converter topology. The proposed solution generates a relatively smooth output dc current with less contents of high-frequency harmonics, thereby avoiding the high-frequency harmonic-related problems found in insulated-gate-bipolar-transistors-based high-current rectifiers. The IGCT would play a significant role to improve the cost-effective performance and reliability in low- and medium-ranged high-current high-power rectifier systems.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
