Abstract
A new application for proton ion beams in the field of Silicon On Insulator material (SOI) technology is reported. In this technology, based on hydrophillic wafer bonding and referred to as “Smart-Cut”, heat treatment induces an in-depth micro-slicing of one of two bonded wafers previously implanted with hydrogen. The principle of this process involves the basic mechanisms associated with high fluence proton implantation in materials, such as blistering, flaking and exfoliation. The intrinsic properties of this process lead to very high crystalline quality of the SOI layers and very good thickness uniformity. After presentation of the process details and the underlying physical aspects, the main characteristics of the Smart-Cut technology and first physical and electrical characterizations are reported.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
