Abstract
Hydrogen-doped In 2O 3 (IO:H) films with high electron mobility and improved near-infrared (NIR) transparency have been applied as a transparent conducting oxide (TCO) electrode in substrate-type hydrogenated microcrystalline silicon ( μc-Si:H) solar cells. The incorporation of IO:H, instead of conventional Sn-doped In 2O 3, improved the short-circuit current density ( J sc) and the resulting conversion efficiency. Optical analysis of the solar cells and TCO films revealed that the improvement in J sc is due to the improved spectral sensitivity in the visible and NIR wavelengths by reduction of absorption loss caused by free carriers in the TCO films.
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