Abstract
The possibility of combined application of gas chromatography, high-resolution IR spectroscopy, and transient microwave gas spectroscopy (TMGS) for investigation of the impurity composition of silicon tetrafluoride is studied. Using high-resolution IR Fourier spectroscopy, the lines of a number of impurities are observed in the region from 4500 to 550 cm−1. The absorption lines of some of the main well-known impurities in silicon tetrafluoride in the 2-mm wavelength range are analyzed. The advantages of the TMGS method for investigating the multicomponent SiF4-impurities system are demonstrated. Using the TMGS method, the freons CHF3, CH2F2, and CH3F are experimentally detected in silicon tetrafluoride.
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