Abstract
Ion beam lithography (IBL) is a very useful tool for the fabrication of nano-structures. In order to expand the applicability of IBL by using highly charged ions (HCI), Ar1+ and Ar9+ ions were irradiated onto spin-on-glass (SOG) through a stencil mask. The step structure was successfully fabricated on SOG by the chemical etching after the irradiation. The depth of etching of the SOG using the Ar9+ ions increases linearly with dose and was greater than the etching depth obtained using Ar1+ ions. The maximum etching depth of the SOG using Ar9+ ions was larger than the range calculated by the SRIM code. The results show the effectiveness of HCI for IBL and indicate the contribution of the damage created by indirect irradiation processes.
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