Application of high-resolution x-ray diffraction for detecting defects in SiGe(C)materials

Abstract

The application of high-resolution x-ray diffraction for detecting and distinguishing defectsin SiGe(C) layers is presented. A depth profile of the defects in SiGe/Si multilayers hasbeen performed by using high-resolution reciprocal lattice mapping at different asymmetricreflections. Transmission electron microscopy was also applied in order to observe defects inthe layers and these results were linked with the x-ray analysis. The substitutional C or Bconcentration in SiGe was measured by the shift of layer peak compared to the intrinsiclayers. The thermal stability of the SiGe layers was investigated in order to rank theepitaxial quality of the SiGe below the detection limit of x-ray technique. It has also beendemonstrated that x-ray analysis can be used for in-line process monitoring oflayers grown in small device openings on patterned substrates. These types ofanalysis have also been used routinely for the evaluation of processed samples.