Application of high energy ion beam for the control of boron diffusion

Abstract

For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce boron transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures have been performed. A slight improvement on the suppression of B diffusion is observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion are observed when the Si doses are increased from 1×1015 to 1×1016cm−2. This dose independent behavior is speculated to be a quasi-steady state of vacancy cluster evaporation.