Abstract
III–V compound semiconductor nanowire (NW) arrays have exhibited remarkable behavior in photovoltaic applications. We embedded an orderly vertical InP NW array in poly(dimethylsiloxane) (PDMS) and peeled it off from the substrate to form a AuZn contact. The sample with the substrate exhibited a very high average absorptance of 92%. However, when the array was peeled off, the optical absorptance degraded, particularly in the longer-wavelength region. After the AuZn was deposited on the back side of the NW array, the absorptance increased. This technology could enable a new approach for NW-based photovoltaics with a lower fabrication cost.
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