Abstract
Amorphous nitrogenated indium-gallium-zinc oxide (a-IGZO:N) thin films were deposited on highly doped silicon (n+Si) wafer substrates and heat-treated by millisecond flash lamp annealing (FLA) at different preheating temperatures to enhance the electrical characteristics of oxynitride thin film transistors (TFTs). A one-dimensional conduction/radiation heat transfer simulation was conducted to predict the temperature fields in the Si substrate, which indicated that the film temperatures during FLA instantaneously rose above 700°C. The electrical characteristics of the a-IGZO:N TFTs were compared with those produced by conventional furnace annealing of one hour. As a result of the FLA process, a remarkable improvement in the TFT device performance was observed in terms of the electrical output characteristics and transfer curves of the a-IGZO:N TFTs. Morphological analyses were conducted using X-ray diffraction, atomic force microscopy, and field emission scanning electron microscopy, indicating the possibility of partial crystallization of the a-IGZO:N channel layers under high-temperature annealing conditions, but the best TFT performance was found for the amorphous phase of IGZO:N.
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