Abstract
Electron beam lithography plays a unique role in the production of masks used in the fabrication of semiconductor devices. During the last 20 years, significant effort has been directed towards the refinement of electron beam direct writing equipment and in the production of new positive and negative resists. The technique can be used as part of a fabrication process for devices, however for large scale manufacture, optical and excimer based lithography is likely to be the dominant method well into the next decade. This article considers the various factors which influence the design of resist material and in particular the parameters which control sensitivity, contrast, resolution, solvent development and plasma etch resistance. Electron beam lithography illustrates an important use of radiation chemistry in the development of a new technology.
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Schedule a callMore From: International Journal of Radiation Applications & Instrumentation. Part C, Radiation Physics & Chemistry
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