Abstract
We report the mechanism of dopant-segregation (DS) technique as applied in metal-germanium-metal photodetectors (MGM-PDs) for dark current suppression. Photodetectors with various dopant-segregation strategies were designed, fabricated, and characterized. Results show that asymmetric MGM-PD, with n- and p-type dopants segregated separately in two NiGe electrodes, is the optimized scheme in terms of dark current and responsivity. It shows a dark current of 10−6A at −1V, which is two to three orders of magnitude lower than that of MGM-PD without DS. n-type dopant (As) segregation in NiGe barrier increases the hole Schottky barrier height to 0.5eV and, thus, plays a crucial role in dark current suppression.
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