Abstract
In order to evaluate the applicability of diamond-like carbon (DLC) films to the above-mentioned processes, the durability of such films against ion implantation has been investigated. Therefore, DLC films deposited on n-type Si (1 1 1) substrates under varying substrate temperature were exposed to boron (B) ion implantation during the integrated circuit (IC) fabrication process. The implantation of B ions was carried out at an acceleration voltage of 30 keV and a dose volume of 5×10 14 ion cm −2. The surface morphology of DLC films before and after implantation was investigated by atomic force microscopy. IR spectra of the DLC films were obtained with an FTIR spectrometer. Concentration and diffusion depth of the implanted dopants in the films were determined by Auger electron spectroscopy (AES). IR spectra indicate that the structure of DLC films is greatly changed by the implantation process. AES spectra reveal the existence of traces of B at the interface between the DLC film and the Si substrate surface. The yield of excellent pn junctions prepared using DLC films as mask materials was measured as a function of the deposition temperature. From the results of I–V characteristics of pn junction and the yield, the optimum condition of the DLC film is at 400 °C of deposition temperature.
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